Method of fabrication of aluminum contacts through a thick insulating layer in an integrated circuit
US4592802A · kind A · utility
39Cited by
2References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 10, 1985 |
| Grant date | Jun 3, 1986 |
| Priority date | — |
| Expiry date | Apr 10, 2005 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In order to form aluminum interconnections through a thick insulating layer in an integrated circuit without any attendant danger of rupture at the level of the contact openings in the insulating layer between the interconnection layer and the substrate, the contact openings are first filled with polycrystalline silicon or a metal having high covering power and deposited by chemical decomposition in gas phase, whereupon the aluminum is deposited by vacuum evaporation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.