Simon Deleonibus
25Patents
8h-index
20Co-inventors
75Inventor score
Filing activity: Apr 10, 1985 → Mar 24, 2010
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6091076A | Quantum WELL MOS transistor and methods for making same | Electricity | 80 | Expired |
| US6562687B1 | MIS transistor and method for making same on a semiconductor substrate | Electricity | 63 | Expired |
| US6787845B2 | Metal source and drain mos transistor | Electricity | 60 | Expired |
| US5314832A | Process for the production of a high voltage MIS integrated circuit | Electricity | 45 | Expired |
| US4592802A | Method of fabrication of aluminum contacts through a thick insulating layer in an integrated circuit | Electricity | 39 | Expired |
| US6346450B1 | Process for manufacturing MIS transistor with self-aligned metal grid | Electricity | 27 | Expired |
| US7666733B2 | Method for making a vertical MOS transistor with embedded gate | Electricity | 13 | Active |
| US6867128B2 | Method for making an electronic component with self-aligned drain and gate, in damascene architecture | Electricity | 13 | Expired |
| US6150241A | Method for producing a transistor with self-aligned contacts and field insulation | Electricity | 7 | Expired |
| US5913136A | Process for making a transistor with self-aligned source and drain contacts | Electricity | 7 | Expired |
| US6998310B2 | Processes for making a single election transistor with a vertical channel | Emerging Cross-Sectional Technologies | 6 | Expired |
| US7566922B2 | Field effect transistor with suitable source, drain and channel materials and integrated circuit comprising same | Electricity | 5 | Expired |
| US5897939A | Substrate of the silicon on insulator type for the production of transistors and preparation process for such a substrate | Emerging Cross-Sectional Technologies | 5 | Expired |
| US5973365A | MOS transistor and lateral insulating method of a MOS transistor active region | Electricity | 5 | Expired |
| US6955963B2 | Damascene architecture electronic storage and method for making same | Electricity | 4 | Expired |
| US6727179B2 | Method for creating an integrated circuit stage wherein fine and large patterns coexist | Emerging Cross-Sectional Technologies | 3 | Expired |
| US7022562B2 | Field-effect transistor with horizontal self-aligned gates and the production method therefor | Electricity | 3 | Expired |
| US7678635B2 | Method of producing a transistor | Electricity | 2 | Active |
| US7820523B2 | Fabrication of active areas of different natures directly onto an insulator: application to the single or double gate MOS transistor | Emerging Cross-Sectional Technologies | 1 | Active |
| US8389368B2 | Method for producing a conductive nanoparticle memory device | Emerging Cross-Sectional Technologies | 0 | Active |
| US7425496B2 | Method for delineating a conducting element disposed on an insulating layer, device and transistor thus obtained | Electricity | 0 | Expired |
| US7466019B2 | Rectangular semi-conducting support for microelectronics and method for making same | Electricity | 0 | Expired |
| US7553693B2 | Method for making a field effect transistor with diamond-like carbon channel and resulting transistor | Electricity | 0 | Expired |
| US8518816B2 | Method for making electrical interconnections with carbon nanotubes | Electricity | 0 | Active |
| US7425509B2 | Method for forming patterns aligned on either side of a thin film | Electricity | 0 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.