Growth of oxide thin films using solid oxygen sources
US4592927A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Mar 2, 1984 |
| Grant date | Jun 3, 1986 |
| Priority date | — |
| Expiry date | Mar 2, 2004 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02269
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Oxide (R.sub.m O.sub.n) films are grown by evaporation from separate sources of element (R) and an oxide (M.sub.r O.sub.s) which serves as the oxygen source. The oxide (M.sub.r O.sub.s) should sublimate congruently; i.e., without decomposing into oxygen and its constituent element (M). On the growth surface this oxide (M.sub.r O.sub.s) can react with the element (R) to form another oxide (R.sub.m O.sub.n) that is thermodynamically more stable: EQU mR+M.sub.r O.sub.s .fwdarw.R.sub.m O.sub.n +M.sub.r O.sub.s-n Using this technique, films of Al.sub.2 O.sub.3, MgO, SiO.sub.2, and MgAl.sub.2 O.sub.4 have been grown using As.sub.2 O.sub.3 or Sb.sub.2 O.sub.3 as the oxygen source.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.