Patent · US Expired

MOS dynamic memory device

US4593382A · kind A · utility

17Cited by
3References
8Claims
0Family size

Assignee

Inventors

Key dates

Filing dateSep 16, 1982
Grant dateJun 3, 1986
Priority date
Expiry dateSep 16, 2002

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C11/404
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

An MOS dynamic memory device is improved in operation by adding a cell plate voltage control circuit to terminals of the word lines and connected to respective cell plates. In operation, the cell plate is recharged after discharged during with a time which a word line remains driven.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.