Method of selectively forming an insulation layer
US4595601A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 20, 1985 |
| Grant date | Jun 17, 1986 |
| Priority date | — |
| Expiry date | May 20, 2005 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76281
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An insulation layer is selectively formed by exposing the surface of a workpiece to an atmosphere comprising a mixture of a halogen-based gas and a raw gas containing a compoundable element chemically bondable with an element of a material constituting surface layer of the workpiece to form an insulating compound. The surface layer of the workpiece is formed of a non-insulating material, such as a metallic material or a semiconductor material. Light rays are directly irradiated on the selected region or regions of the surface of the workpiece through the atmosphere of the gaseous mixture, thereby dissociating said halogen-based gas. As a result, a layer comprising the insulating compound is formed on the selected region of the surface of the workpiece on which the light rays have been directly irradiated.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.