Double-channel planar heterostructure semiconductor laser
US4597085A · kind A · utility
14Cited by
1References
3Claims
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Key dates
| Filing date | Sep 15, 1983 |
| Grant date | Jun 24, 1986 |
| Priority date | — |
| Expiry date | Sep 15, 2003 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/2277
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A double-channel planar buried-heterostructure semiconductor laser diode (DC-PBH LD) has improved high frequency response characteristics due to lower p-n junction capacitance resulting from the interposition of a low carrier concentration blocking layer between p-n-p-n blocking layers of the DC-PBH LD structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.