Method for making silicon wafers
US4597822A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 28, 1985 |
| Grant date | Jul 1, 1986 |
| Priority date | — |
| Expiry date | Mar 28, 2005 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3221
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a silicon wafer includes growing a layer of low-resistivity crystalline silicon upon a precision-ground slice of single-crystal, high-resistivity silicon. The slice of single-crystal silicon has a thickness sufficient to withstand handling during the initial part of the processing. The crystalline silicon is built up to a thickness which is sufficient to withstand handling and processing of the finished wafer. The layer of single-crystal silicon is thereupon precision ground to reduce its final thickness to a value required for the devices to be formed thereon. The crystalline layer performs gettering to remove impurities from the single-crystal silicon during normal heating attendant to the formation of the solid-state devices thereon. The present invention further includes a silicon wafer made by the process of the invention.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.