John L. Benjamin
12Patents
6h-index
24Co-inventors
66Inventor score
Filing activity: Mar 28, 1985 → Oct 27, 2011
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6465325B2 | Process for depositing and planarizing BPSG for dense trench MOSFET application | Electricity | 75 | Expired |
| US6080614A | Method of making a MOS-gated semiconductor device with a single diffusion | Emerging Cross-Sectional Technologies | 27 | Expired |
| US6054369A | Lifetime control for semiconductor devices | Electricity | 16 | Expired |
| US8148749B2 | Trench-shielded semiconductor device | Electricity | 12 | Active |
| US4778776A | Passivation with a low oxygen interface | Emerging Cross-Sectional Technologies | 12 | Expired |
| US6358825B1 | Process for controlling lifetime in a P-I-N diode and for forming diode with improved lifetime control | Electricity | 6 | Expired |
| US8049276B2 | Reduced process sensitivity of electrode-semiconductor rectifiers | Electricity | 3 | Active |
| US5877044A | Method of making MOS-gated semiconductor devices | Electricity | 2 | Expired |
| US7332750B1 | Power semiconductor device with improved unclamped inductive switching capability and process for forming same | Electricity | 2 | Expired |
| US8492837B2 | Reduced process sensitivity of electrode-semiconductor rectifiers | Electricity | 1 | Active |
| US4597822A | Method for making silicon wafers | Electricity | 1 | Expired |
| US8227855B2 | Semiconductor devices with stable and controlled avalanche characteristics and methods of fabricating the same | Electricity | 1 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.