Barrier layer for photovoltaic devices

US4598306A · kind A · utility

Assignee

• Energy Conversion Devices, Inc. · US

Inventors

• Prem Nath · Rochester, US
• Masatsugu Izu · Birmingham, US

Key dates

• Filing date: Jul 28, 1983
• Grant date: Jul 1, 1986
• Expiry date: Jul 28, 2003

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02P70/50

Abstract

An improved semiconductor device, adapted to provide electrical current in response to light energy incident thereon, includes a first electrode, an active semiconductor body atop the first electrode, a second electrode atop the semiconductor body, and at least one defect region which is capable of providing a low resistance shunt path for the flow of electrical current between the electrodes of the device. The improvement comprises a continuous transparent barrier layer (1) operatively disposed between the semiconductor body and one of the electrodes of the device and (2) adapted to decrease the flow of electrical current through the at least one defect region of the semiconductor device. The barrier layer is formed from a material chosen from the group consisting essentially of oxides, nitride and carbides of: indium, tin, cadmium, zinc, antimony, silicon, chromium and mixtures thereof. Methods of (1) fabricating improved semiconductor devices and (2) preventing operational mode failures due to latent detents are also disclosed.