Method of producing single-crystal silicon film
US4599133A · kind A · utility
39Cited by
10References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 4, 1983 |
| Grant date | Jul 8, 1986 |
| Priority date | — |
| Expiry date | May 4, 2003 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S117/905
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
On a semiconductor substrate surface, a plurality of polycrystalline or amorphous silicon films and a plurality of insulator films which are substantially transparent to an irradiating energy beam and each of which has an opening are formed so as to be alternately stacked. Thereafter, the plurality of polycrystalline or amorphous silicon films are turned into a single crystal by irradiating them with the energy beam.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.