Thin film deposition
US4599135A · kind A · utility
62Cited by
1References
28Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 28, 1984 |
| Grant date | Jul 8, 1986 |
| Priority date | — |
| Expiry date | Sep 28, 2004 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/452
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
In a thin film deposition apparatus, means for depositing a film on a substrate and means for etching the deposited film to make flat the surface thereof, are provided in a reaction vessel independently of each other. This apparatus can rapidly deposit the film without rising the temperature of the substrate excessively. Further, since the deposition means and etching means are independent of each other, the deposition of a film on the substrate and the planarization of the surface of the deposited film can be achieved under various conditions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.