Semiconductor processing facility for providing enhanced oxidation rate
US4599247A · kind A · utility
15Cited by
2References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 4, 1985 |
| Grant date | Jul 8, 1986 |
| Priority date | — |
| Expiry date | Jan 4, 2005 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02255
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The disclosure relates to a method of growing thermal oxide on silicon wherein the oxide is grown at an increased rate, at reduced temperature or a combination thereof. This is accomplished by operating in an hermetic quartz tube capable of withstanding high pressure with steam or oxygen at super atmospheric pressure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.