Semiconductor laser device having facets provided with dielectric layers
US4599729A · kind A · utility
13Cited by
2References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 9, 1984 |
| Grant date | Jul 8, 1986 |
| Priority date | — |
| Expiry date | Feb 9, 2004 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/028
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
In a semiconductor laser device of the type which includes at least one laminate of a first dielectric layer and a second dielectric layer on at least one of the two facets of a resonator and in which the refractive index of the first dielectric layer is lower than that of the second dielectric layer, the improvement wherein the second dielectric layer consists of an amorphous material containing silicon and hydrogen at its essential constituent elements.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.