Maskless etching of polysilicon
US4601778A · kind A · utility
31Cited by
7References
2Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Feb 25, 1985 |
| Grant date | Jul 22, 1986 |
| Priority date | — |
| Expiry date | Feb 25, 2005 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/924
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Maskless etching of polysilicon is accomplished by exposing portions of a polysilicon surface to ion bombardment. Bombardment by oxygen or hydrogen ions is effective to reduce the etch rate of polysilicon in a chlorine-containing plasma. Therefore, patterned ion bombardment prior to etching in a chlorine plasma is effective to pattern the polysilicon surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.