Francine Y. Robb
37Patents
14h-index
37Co-inventors
81Inventor score
Filing activity: Aug 2, 1982 → Oct 2, 2014
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5266515A | Fabricating dual gate thin film transistors | Emerging Cross-Sectional Technologies | 227 | Expired |
| US6204097A | Semiconductor device and method of manufacture | Electricity | 109 | Expired |
| US5155563A | Semiconductor device having low source inductance | Electricity | 50 | Expired |
| US4847214A | Method for filling trenches from a seed layer | Electricity | 49 | Expired |
| US7282406B2 | Method of forming an MOS transistor and structure therefor | Electricity | 45 | Expired |
| US7579632B2 | Multi-channel ESD device and method therefor | Emerging Cross-Sectional Technologies | 42 | Active |
| US5268326A | Method of making dielectric and conductive isolated island | Emerging Cross-Sectional Technologies | 42 | Expired |
| US7297603B2 | Bi-directional transistor and method therefor | Electricity | 37 | Expired |
| US4529860A | Plasma etching of organic materials | Electricity | 31 | Expired |
| US4601778A | Maskless etching of polysilicon | Emerging Cross-Sectional Technologies | 31 | Expired |
| US7538395B2 | Method of forming low capacitance ESD device and structure therefor | Emerging Cross-Sectional Technologies | 23 | Active |
| US6392266B1 | Transient suppressing device and method | Electricity | 19 | Expired |
| US6953980B2 | Semiconductor filter circuit and method | Electricity | 19 | Expired |
| US8466513B2 | Semiconductor device with enhanced mobility and method | Electricity | 15 | Active |
| US7537970B2 | Bi-directional transistor with by-pass path and method therefor | Electricity | 13 | Active |
| US5589408A | Method of forming an alloyed drain field effect transistor and device formed | Electricity | 12 | Expired |
| US6515345B2 | Transient voltage suppressor with diode overlaying another diode for conserving space | Emerging Cross-Sectional Technologies | 11 | Expired |
| US8101969B2 | Bi-directional transistor with by-pass path and method therefor | Electricity | 9 | Active |
| US7030447B2 | Low voltage transient voltage suppressor | Electricity | 8 | Expired |
| US7910409B2 | Bi-directional transistor with by-pass path and method therefor | Electricity | 8 | Active |
| US5747371A | Method of manufacturing vertical MOSFET | Emerging Cross-Sectional Technologies | 7 | Expired |
| US8530284B2 | Method of forming a bi-directional transistor with by-pass path | Electricity | 5 | Active |
| US7767529B2 | Semiconductor component and method of manufacture | Electricity | 5 | Active |
| US7102199B2 | Low voltage transient voltage suppressor and method of making | Electricity | 5 | Expired |
| US5369304A | Conductive diffusion barrier of titanium nitride in ohmic contact with a plurality of doped layers therefor | Emerging Cross-Sectional Technologies | 4 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.