Monitoring technique for plasma etching
US4602981A · kind A · utility
55Cited by
3References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 6, 1985 |
| Grant date | Jul 29, 1986 |
| Priority date | — |
| Expiry date | May 6, 2005 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32935
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Plasma potential monitoring during a plasma etching process is accomplished by measuring the RF voltage at an electrode of, for example, a high pressure, high plasma density, symmetric single wafer reactor. The plasma potential is indicative of the plasma density, which has a high sensitivity to secondary electron emission from a wafer surface and yields both process etching endpoint and diagnostic information for a wide variety of processes and process conditions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.