Semiconductor memory device
US4604730A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 8, 1984 |
| Grant date | Aug 5, 1986 |
| Priority date | — |
| Expiry date | Feb 8, 2004 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C29/835
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor memory device includes a plurality of memory cell blocks corresponding to output terminals, and a redundancy memory cell block for replacing a faulty memory cell block among the memory cell blocks, the redundancy memory cell block having a first specific area for storing a first predetermined data of electronic signatures. Each of the memory cell blocks having a second specific area for storing a second predetermined data equal to a divided one of the first predetermined data in a one to one correspondence. The semiconductor memory device further includes a circuit for selectively reading, when one of the memory cell blocks is replaced by the redundancy memory cell block, a divided one of the first predetermined data corresponding to the second predetermined data stored inthe memory cell block to be replaced by the redundancy memory cell block. The second predetermined data can be correctly read out even when a faulty memory cell block is replaced with the redundancy memory cell block.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.