Kiyoshi Itano
26Patents
13h-index
15Co-inventors
74Inventor score
Filing activity: Jan 27, 1984 → Oct 7, 2002
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5452251A | Semiconductor memory device for selecting and deselecting blocks of word lines | Physics | 44 | Expired |
| US5608670A | Flash memory with improved erasability and its circuitry | Electricity | 43 | Expired |
| US4906862A | Semiconductor integrated circuit device having power down mode | Electricity | 28 | Expired |
| US5105388A | Programmable logic device including verify circuit for macro-cell | Electricity | 27 | Expired |
| US4614881A | Integrated semiconductor circuit device for generating a switching control signal using a flip-flop circuit including CMOS FET's and flip-flop setting means | Physics | 22 | Expired |
| US5576637A | XOR CMOS logic gate | Electricity | 21 | Expired |
| US6646920B2 | Nonvolatile semiconductor memory device having electrically and collectively erasable characteristics | Physics | 20 | Expired |
| US5638323A | Nonvolatile semiconductor memory using tunnel effect having a control circuit for simultaneously writing and reading data out of a plurality of memory cells | Physics | 17 | Expired |
| US5406524A | Nonvolatile semiconductor memory that eases the dielectric strength requirements | Physics | 17 | Expired |
| US4912677A | Programmable logic device | Electricity | 15 | Expired |
| US4604730A | Semiconductor memory device | Physics | 15 | Expired |
| US5592419A | Flash memory with improved erasability and its circuitry | Electricity | 15 | Expired |
| US5770963A | Flash memory with improved erasability and its circuitry | Electricity | 14 | Expired |
| US4893033A | Programmable logic array having input transition detection for generating precharge | Electricity | 13 | Expired |
| US5666314A | Semiconductor memory device for selecting and deselecting blocks of word lines | Physics | 12 | Expired |
| US5581107A | Nonvolatile semiconductor memory that eases the dielectric strength requirements | Physics | 7 | Expired |
| US5631597A | Negative voltage circuit for a flash memory | Electricity | 6 | Expired |
| US5353249A | Non-volatile semiconductor memory device | Physics | 5 | Expired |
| US4615021A | Semiconductor memory device | Physics | 3 | Expired |
| US5815440A | Semiconductor memory device with electrically controllable threshold voltage | Physics | 3 | Expired |
| US6008544A | Semiconductor device and manufacturing method of the semiconductor device | Electricity | 3 | Expired |
| US6574149B2 | Semiconductor memory and its usage | Physics | 2 | Expired |
| US6750520B2 | Two-bit semiconductor memory with enhanced carrier trapping | Electricity | 1 | Expired |
| US6284638A | Manufacturing method of a semiconductor device | Electricity | 1 | Expired |
| US6611464B2 | Nonvolatile semiconductor memory device having electrically and collectively erasable characteristics | Physics | 0 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.