Semiconductor optoelectro transducer
US4608587A · kind A · utility
2Cited by
1References
2Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jul 29, 1983 |
| Grant date | Aug 26, 1986 |
| Priority date | — |
| Expiry date | Jul 29, 2003 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/196
Abstract
The present invention has for its object to make a semiconductor optoelectro transducer higher-speed and higher-sensitivity. To this end, a field effect transistor, static induction transistor or static induction thyristor is used as a basic element and at least one portion of the gate region is exposed at the wafer surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.