Method and apparatus for monitoring etching
US4609426A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 22, 1985 |
| Grant date | Sep 2, 1986 |
| Priority date | — |
| Expiry date | May 22, 2005 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N2201/122
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
This invention relates to a method and apparatus for monitoring etching. The monitor method comprises the steps of regulating a gas pressure inside a treating chamber, in which a sample is being etched by a dry etching process, to a pressure at which a emission line spectrum can be clarified, converting the gas whose pressure is regulated to plasma, and monitoring the etching state of the sample from the change of the intensity of the emission line spectrum with time. The monitor apparatus comprises exhaust means for discharging a gas from a treating chamber in which a sample is being etched by a dry etching process, plasma means for introducing the gas discharged from the treating chamber and converting it plasma, pressure regulation means for regulating the pressure of the gas at the plasma means to a pressure at which a emission line spectrum can be clarified, and spectrum detection means for detecting the emission line spectrum of the plasma at the plasma means, and detecting the change of the intensity of the detected emission line spectrum with time.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.