Method and apparatus for microwave plasma anisotropic dry etching
US4609428A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jul 18, 1985 |
| Grant date | Sep 2, 1986 |
| Priority date | — |
| Expiry date | Jul 18, 2005 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32678
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A microwave plasma etching method and apparatus for performing substantially anisotropic etching to form micropatterns on IC substrates. A microwave power source creates a plasma from a gas with a relatively low pressure such as 10.sup.-3 to 10.sup.-4 Torr, so that the mean free path of the gas molecules exceeds the dimensions of the etching apparatus. A magnetic field is generated in a plasma generating chamber, a reaction chamber where in the substrate is mounted and a connecting chamber. The plasma discharge is enhanced by a cyclotron resonance magnetic field intensity corresponding to the frequency of the microwave power applied to the plasma chamber. The magnetic field creates a magnetic mirror which prevents the electrons in the plasma from entering into the reaction chamber so as to eliminate the generation of free radicals in which the reaction chamber which adversely affect the anisotropic etching ability.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.