Junction-MOS power field effect transistor
US4611220A · kind A · utility
24Cited by
6References
7Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Nov 16, 1983 |
| Grant date | Sep 9, 1986 |
| Priority date | — |
| Expiry date | Nov 16, 2003 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/519
Abstract
A thin film insulated gate field effect transistor having an opposite conductivity type island in its channel region. The island is electrically shorted to the transistor gate electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.