Patent · US Expired

Method of high contrast positive O-quinone diazide photoresist developing using pretreatment solution

US4613561A · kind A · utility

15Cited by
10References
7Claims
0Family size

Assignee

Inventor

Key dates

Filing dateOct 17, 1984
Grant dateSep 23, 1986
Priority date
Expiry dateOct 17, 2004

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG03F7/322
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

A positive photoresist aqueous alkaline two-step developing method is provided that gives a high contrast to the photoresist. The developer disclosed comprises a formulation of aqueous alkali-base such as potassium hydroxide and a fluorocarbon or carboxylated surfactant. The incorporation of the fluorocarbon or carboxylated surfactant provides the unexpected increase in the contrast of the photoresist. A double dip method in effecting development of the exposed film is used. The contrast and sensitivity of the photoresist remains essentially unchanged over the life of the bath. The high contrast photoresist provides linewidth control and affords improved processing uniformity in photoresist imaging.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.