Hybrid extended drain concept for reduced hot electron effect

US4613882A · kind A · utility

Assignee

• General Electric Company · US

Inventors

• Joseph M. Pimbley · Schenectady, US
• Gennady Gildenblat · Schenectady, US
• Ching-Yeu Wei · Niskayuna, US
• Joseph Shappir · Jerusalem, IL

Key dates

• Filing date: Apr 12, 1985
• Grant date: Sep 23, 1986
• Expiry date: Apr 12, 2005

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/60

Abstract

Hot electron injection into the gate oxides of MOSFET devices imposes limitations on the miniaturization of such devices in VLSI circuits. A buried channel with a surface spacer is provided to guard against hot electron trapping effects while preserving process and structure compatibility with micron or submicron VLSI devices. The channel current is redirected into a buried channel at a distance away from the interface in the vicinity of the drain region where the hot electron effect is most likely to occur. Additionally, a surface implant is performed to improve any gate control that may be lost as a result of the buried channel so as to mitigate any degradation of the current-voltage characteristics of the device.