Ching-Yeu Wei
60Patents
21h-index
44Co-inventors
88Inventor score
Filing activity: Apr 25, 1973 → Dec 15, 2014
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5187369A | High sensitivity, high resolution, solid state x-ray imaging device with barrier layer | Electricity | 100 | Expired |
| US5518956A | Method of isolating vertical shorts in an electronic array using laser ablation | Emerging Cross-Sectional Technologies | 60 | Expired |
| US6392254B1 | Corrosion resistant imager | Electricity | 51 | Expired |
| US5231655A | X-ray collimator | Physics | 45 | Expired |
| US5430298A | CT array with improved photosensor linearity and reduced crosstalk | Electricity | 44 | Expired |
| US5156986A | Positive control of the source/drain-gate overlap in self-aligned TFTS via a top hat gate electrode configuration | Electricity | 43 | Expired |
| US5231654A | Radiation imager collimator | Physics | 43 | Expired |
| US5303282A | Radiation imager collimator | Physics | 41 | Expired |
| US5517031A | Solid state imager with opaque layer | Electricity | 39 | Expired |
| US5293417A | X-ray collimator | Physics | 39 | Expired |
| US5318664A | Patterning of indium-tin oxide via selective reactive ion etching | Emerging Cross-Sectional Technologies | 38 | Expired |
| US6167110A | High voltage x-ray and conventional radiography imaging apparatus and method | Physics | 36 | Expired |
| US5516712A | Method of fabricating radiation imager with single passivation dielectric for transistor and diode | Electricity | 33 | Expired |
| US5475246A | Repair line structure for thin film electronic devices | Electricity | 31 | Expired |
| US5132745A | Thin film transistor having an improved gate structure and gate coverage by the gate dielectric | Electricity | 30 | Expired |
| US5435608A | Radiation imager with common passivation dielectric for gate electrode and photosensor | Emerging Cross-Sectional Technologies | 30 | Expired |
| US6396046B1 | Imager with reduced FET photoresponse and high integrity contact via | Electricity | 30 | Expired |
| US4859620A | Graded extended drain concept for reduced hot electron effect | Emerging Cross-Sectional Technologies | 24 | Expired |
| US4729005A | Method and apparatus for improved metal-insulator-semiconductor device operation | Electricity | 23 | Expired |
| US5585280A | Method of fabricating solid state radiation imager with high integrity barrier layer | Electricity | 23 | Expired |
| US5463225A | Solid state radiation imager with high integrity barrier layer and method of fabricating | Electricity | 22 | Expired |
| US5399884A | Radiation imager with single passivation dielectric for transistor and diode | Electricity | 21 | Expired |
| US4680603A | Graded extended drain concept for reduced hot electron effect | Electricity | 21 | Expired |
| US4613882A | Hybrid extended drain concept for reduced hot electron effect | Electricity | 19 | Expired |
| US6414315B1 | Radiation imaging with continuous polymer layer for scintillator | Physics | 18 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.