Gate protection for a MOSFET
US4616243A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 18, 1984 |
| Grant date | Oct 7, 1986 |
| Priority date | — |
| Expiry date | Jun 18, 2004 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/811
Abstract
This invention relates to a protection device of a semiconductor device. The present invention can prevent the drop of a gate breakdown voltage due to miniaturization of a device without impeding the high speed performance of the circuit attached thereto. The invention improves the voltage that can be applied to the input terminal of the device by reducing the surface breakdown voltage of a surface breakdown type MOS transistor, which is a principal member of a protection device, and reducing the resistance after the breakdown. This can be accomplished, for example, by increasing the concentration of a region in which the MOS transistor is disposed, by reducing the depth of the region, and so forth.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.