Osamu Minato
41Patents
21h-index
85Co-inventors
88Inventor score
Filing activity: Jan 13, 1976 → Jun 6, 1995
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US4455495A | Programmable semiconductor integrated circuitry including a programming semiconductor element | Electricity | 111 | Expired |
| US4086642A | Protective circuit and device for metal-oxide-semiconductor field effect transistor and method for fabricating the device | Electricity | 109 | Expired |
| US4701884A | Semiconductor memory for serial data access | Electricity | 102 | Expired |
| US4609407A | Method of making three dimensional semiconductor devices in selectively laser regrown polysilicon or amorphous silicon layers | Electricity | 66 | Expired |
| US4992677A | High speed MOSFET output buffer with low noise | Electricity | 61 | Expired |
| US4653025A | Random access memory with high density and low power | Physics | 52 | Expired |
| US5194749A | Semiconductor integrated circuit device | Emerging Cross-Sectional Technologies | 51 | Expired |
| US4539660A | Semiconductor integrated circuit | Emerging Cross-Sectional Technologies | 46 | Expired |
| US4507759A | Static memory | Electricity | 43 | Expired |
| US4853894A | Static random-access memory having multilevel conductive layer | Emerging Cross-Sectional Technologies | 43 | Expired |
| US5483083A | Semiconductor integrated circuit device | Emerging Cross-Sectional Technologies | 42 | Expired |
| US4805147A | Stacked static random access memory cell having capacitor | Emerging Cross-Sectional Technologies | 41 | Expired |
| US5132771A | Semiconductor memory device having flip-flop circuits | Emerging Cross-Sectional Technologies | 40 | Expired |
| US4672586A | Semiconductor memory having circuit effecting refresh on variable cycles | Physics | 35 | Expired |
| US4280065A | Tri-state type driver circuit | Electricity | 33 | Expired |
| US4849801A | Semiconductor memory device having increased capacitance for the storing nodes of the memory cells | Emerging Cross-Sectional Technologies | 30 | Expired |
| US4492974A | DMOS With gate protection diode formed over base region | Electricity | 29 | Expired |
| US4747082A | Semiconductor memory with automatic refresh means | Physics | 26 | Expired |
| US5172335A | Semiconductor memory with divided bit load and data bus lines | Physics | 22 | Expired |
| US4616243A | Gate protection for a MOSFET | Electricity | 22 | Expired |
| US4785342A | Static random access memory having structure of first-, second- and third-level conductive films | Electricity | 22 | Expired |
| US4641285A | Line change-over circuit and semiconductor memory using the same | Physics | 20 | Expired |
| US4937790A | Semiconductor memory device | Physics | 19 | Expired |
| US4609835A | Semiconductor integrated circuit | Electricity | 18 | Expired |
| US4377819A | Semiconductor device | Electricity | 18 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.