Rapid etching method for silicon by SF.sub.6 gas
US4617086A · kind A · utility
2Cited by
2References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 19, 1982 |
| Grant date | Oct 14, 1986 |
| Priority date | — |
| Expiry date | Mar 19, 2002 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3065
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of etching silicon with a laser at a very fast rate of the order of 45 microns/second includes the steps of providing an atmosphere of sulfur hexafluoride about the silicon and directing a continuous laser beam having a wavelength of about 0.6 or less microns at said silicon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.