Thin film device
US4618873A · kind A · utility
16Cited by
3References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 18, 1984 |
| Grant date | Oct 21, 1986 |
| Priority date | — |
| Expiry date | Jun 18, 2004 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/18
Abstract
In a thin film device having a hydrogenated amorphous silicon film, a metal layer is formed on the hydrogenated amorphous silicon film and then the metal layer is removed. A resulting reaction layer formed on the hydrogenated amorphous silicon film is used as a resistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.