Hideaki Yamamoto
143Patents
23h-index
216Co-inventors
93Inventor score
Filing activity: Mar 11, 1974 → Oct 12, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6433842B1 | Liquid crystal display device and method of manufacturing the same | Physics | 147 | Expired |
| US5359206A | Thin film transistor substrate, liquid crystal display panel and liquid crystal display equipment | Electricity | 127 | Expired |
| US5285301A | Liquid crystal display device having peripheral dummy lines | Physics | 96 | Expired |
| US5032531A | Method of manufacturing active matrix panel | Physics | 79 | Expired |
| US5541748A | Liquid crystal display having patterned insulating and semiconductor layers and a method of fabricating the same | Physics | 67 | Expired |
| US5510918A | Liquid crystal display device with a structure of improved terminal contact | Physics | 60 | Expired |
| US5151385A | Method of manufacturing a metallic silicide transparent electrode | Emerging Cross-Sectional Technologies | 53 | Expired |
| US5153144A | Method of making tunnel EEPROM | Electricity | 49 | Expired |
| US5079603A | Semiconductor memory device | Electricity | 38 | Expired |
| US5719408A | Thin film transistor substrate, manufacturing method thereof, liquid crystal display panel and liquid crystal display equipment | Electricity | 38 | Expired |
| US4972371A | Semiconductor memory device | Electricity | 36 | Expired |
| US5340760A | Method of manufacturing EEPROM memory device | Electricity | 34 | Expired |
| US4990981A | Thin film transistor and a liquid crystal display device using same | Electricity | 34 | Expired |
| US5402254A | Liquid crystal display device with TFTS in which pixel electrodes are formed in the same plane as the gate electrodes with anodized oxide films before the deposition of silicon | Physics | 32 | Expired |
| US5671027A | LCD device with TFTs in which pixel electrodes are formed in the same plane as the gate electrodes with anodized oxide films and before the deposition of the silicon gate insulator | Physics | 32 | Expired |
| US5610738A | Method for making LCD device in which gate insulator of TFT is formed after the pixel electrode but before the video signal line | Physics | 30 | Expired |
| US5530568A | Matrix liquid crystal, display device having testing pads of transparent conductive film | Physics | 29 | Expired |
| US5600460A | Method of repairing a signal line open circuit by connecting each side of the signal line to an adjacent pixel electrode | Physics | 27 | Expired |
| US4565928A | Photo electro transducer device | Electricity | 27 | Expired |
| US4121537A | Apparatus for vacuum deposition | Chemistry; Metallurgy | 27 | Expired |
| US6226059A | Active matrix display device using aluminum alloy in scanning signal line or video signal line | Physics | 26 | Expired |
| US5889573A | Thin film transistor substrate, manufacturing method thereof, liquid crystal display panel and liquid crystal display equipment | Electricity | 24 | Expired |
| US4982095A | Multi-element type radiation detector | Emerging Cross-Sectional Technologies | 23 | Expired |
| US5585290A | Method of manufacturing a thin film transistor substrate | Electricity | 22 | Expired |
| US8964079B2 | Image sensor and image capturing apparatus | Electricity | 22 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.