Method and apparatus for low pressure chemical vapor deposition
US4619844A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 22, 1985 |
| Grant date | Oct 28, 1986 |
| Priority date | — |
| Expiry date | Jan 22, 2005 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/4485
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of introducing a controlled flow of vapor from a high pressure sublimation chamber into a low pressure vapor deposition reactor, said vapor being derived from solid source material preferably, but not necessarily, having a vapor pressure above about one (1) Torr at a temperature not exceeding about 350.degree. C. The method comprises controllably heating the source material to a temperature sufficient to produce vapor therefrom at a desired pressure, and then controllably transferring the vapor through vapor transmission means to the vapor deposition reactor. During such transfer, the transmission means is maintained at a temperature sufficient to prevent condensation of the vapor therein during transfer. The vapor is delivered to the reactor in a pure state and is not mixed with any carrier medium.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.