Single longitudinal mode semiconductor laser
US4622674A · kind A · utility
16Cited by
1References
16Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | May 7, 1984 |
| Grant date | Nov 11, 1986 |
| Priority date | — |
| Expiry date | May 7, 2004 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/125
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A single longitudinal mode semiconductor laser having a distributed Bragg reflector with increased diffractive efficiency. The increased diffractive efficiency results from placing the diffraction grating within the optical waveguide, rather than on either its upper or its lower face. This placement enables maximization of the electric field component of light beams subjected to periodic variations in the refractive index within the optical waveguide, in turn enabling increased reflecting power which results in a low oscillation threshold and a high differential quantum efficiency.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.