Module for high vacuum processing
US4622918A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Sep 28, 1984 |
| Grant date | Nov 18, 1986 |
| Priority date | — |
| Expiry date | Sep 28, 2004 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67784
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Module for processing advancing substrates including an elongated housing enclosing pairs of superposed transporters defining a longitudinal passage; a source of pressurized gaseous transport medium communicating with the longitudinal passage, so as to provide a free floating transport of the substrates through the passage; and a series of processing chambers interposed between the pairs of transporters, so that a non-processing side and a processing side of the advancing substrates are exposed within the processing chamber. A plurality of gaseous transport medium discharge ducts extends laterally across the longitudinal passage above and below the substrates so as to collect and remove excess gaseous transport medium, while assisting the advance of the substrates in the passage. A number of substrate processing means may be employed including ion beam deposition, plasma deposition, plasma etching, sputter etching, ion milling, CVD systems, chrome etching, electron beam annealing, ion implantation electron beam deposition, high vacuum evaporation and reactive ion etching.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.