Low temperature process for depositing epitaxial layers
US4623426A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Feb 8, 1985 |
| Grant date | Nov 18, 1986 |
| Priority date | — |
| Expiry date | Feb 8, 2005 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/46
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The specification discloses a low temperature process for depositing an epitaxial layer of a selected oxide or a selected sulfide material on a chosen substrate. The substrate is exposed to a chosen vapor phase reactant in the presence of neutral, charge-free oxygen atoms or sulfur atoms to produce a reaction between the atomic species and the vapor phase reactant to form the desired oxide or sulfide and induce the crystalline growth thereof as an epitaxial layer on the surface of the substrate. The atomic oxygen or the atomic sulfur is formed at a low temperature by the photochemical dissociation of a selected oxygen-containing precursor or a selected sulfur-containing precursor, respectively.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.