Process for forming patterns using ionizing radiation sensitive resist
US4623609A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 20, 1985 |
| Grant date | Nov 18, 1986 |
| Priority date | — |
| Expiry date | May 20, 2005 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC08F8/20
- WIPO fieldMacromolecular chemistry, polymers
- WIPO sectorChemistry
Abstract
An ionizing radiation sensitive resist consisting essentially of a polymer having a recurring unit represented by the following formula: ##STR1## wherein X is a hydrogen atom, a methyl group, or a halogen atom and R.sup.1, R.sup.2, R.sup.3, R.sup.4 and R.sup.5, which may be identical or different, are hydrogen atoms, halogen atoms, alkyl groups having 1 to 3 carbon atoms, alkoxy groups having 1 to 3 carbon atoms, haloalkyl groups having 1 to 3 carbon atoms or haloalkoxy groups having 1 to 3 carbon atoms, at least a part of the X groups present in said polymer being a halogen atom, at least a part of the Y.sup.1 and Y.sup.2 group present in said polymer being a halogen atom, and at least a part of the R.sup.1, R.sup.2, R.sup.3, R.sup.4 and R.sup.5 groups present in said polymer being a haloalkyl or haloalkoxy group having 1 to 3 carbon atoms. Said ionizing radiation sensitive resist is suitable as a negative type resist. This resist is used in the form of an organic solvent solution to form a coating film on a substrate and the desired parts of this coating film are irradiated with an ionizing radiation, whereby patterns are formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.