Thin film transistor having polycrystalline silicon layer with 0.01 to 5 atomic % chlorine
US4625224A · kind A · utility
30Cited by
3References
3Claims
0Family size
Assignee
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Key dates
| Filing date | Jan 10, 1983 |
| Grant date | Nov 25, 1986 |
| Priority date | — |
| Expiry date | Jan 10, 2003 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/40
Abstract
A semiconductor element having a main part of a polycrystalline silicon semiconductor layer containing 0.01 to 5 atomic % of chlorine atoms.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.