Satoshi Omata
15Patents
12h-index
22Co-inventors
70Inventor score
Filing activity: Jan 10, 1983 → Mar 19, 1991
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US4766477A | Semiconductor device including a semiconductor layer having a polycrystalline silicon film with selected atomic constituency | Emerging Cross-Sectional Technologies | 108 | Expired |
| US4814842A | Thin film transistor utilizing hydrogenated polycrystalline silicon | Electricity | 65 | Expired |
| US5067160A | Motion-pattern recognition apparatus | Physics | 39 | Expired |
| US4625224A | Thin film transistor having polycrystalline silicon layer with 0.01 to 5 atomic % chlorine | Electricity | 30 | Expired |
| US4884079A | Image forming apparatus and driving method therefor | Physics | 26 | Expired |
| US4905072A | Semiconductor element | Electricity | 25 | Expired |
| US4719501A | Semiconductor device having junction formed from two different hydrogenated polycrystalline silicon layers | Emerging Cross-Sectional Technologies | 23 | Expired |
| US4675667A | Method for driving liquid-crystal panel | Physics | 21 | Expired |
| US4881066A | Active matrix-type display panel | Physics | 20 | Expired |
| US5123048A | Speech processing apparatus | Physics | 17 | Expired |
| US4645684A | Method for forming deposited film | Emerging Cross-Sectional Technologies | 15 | Expired |
| US4816819A | Display panel | Physics | 14 | Expired |
| US4921722A | Method for forming deposited film | Electricity | 3 | Expired |
| US4982251A | Semiconductor element | Electricity | 3 | Expired |
| US4982170A | Signal processing apparatus | Electricity | 0 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.