Method for forming deposition film
US4626449A · kind A · utility
11Cited by
5References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 28, 1985 |
| Grant date | Dec 2, 1986 |
| Priority date | — |
| Expiry date | Oct 28, 2005 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/268
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a deposition film by introducing a starting gas for formation of a deposition film into a reaction chamber housing a substrate therein and forming a deposition film on the substrate by irradiation with light comprises performing deposition by using a monochromatic light and a continuous polychromatic light in combination and projecting the lights on the substrate on which the deposition film is to be formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.