Gate turn-off thyristor
US4626888A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 10, 1983 |
| Grant date | Dec 2, 1986 |
| Priority date | — |
| Expiry date | Nov 10, 2003 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D18/60
Abstract
In accordance with the present invention, a plurality of strip-shaped emitter layers on the cathode side are radially arranged on one main surface of the semiconductor substrate while forming a plurality of rings. A gate electrode is in ohmic contact with a part of a base layer which surrounds and is adjacent to each of said emitter layers on the cathode side. Between rings formed by said emitter layers on the cathode side, a ring-shaped gate collecting electrode is provided to be connected to said gate electrode. The gate collecting electrode is provided at a position to balance the potential differences produced by gate currents respectively corresponding to inside and outside of said gate collecting electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.