Method for obtaining full oxide isolation of epitaxial islands in silicon utilizing selective oxidation of porous silicon
US4628591A · kind A · utility
30Cited by
8References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 31, 1984 |
| Grant date | Dec 16, 1986 |
| Priority date | — |
| Expiry date | Oct 31, 2004 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/085
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Full oxide isolation of epitaxial islands can be accomplished by oxidizing suitably porous silicon. The porous silicon can be created by anodizing highly doped n+ silicon in hydroflouric acid. Lesser doped epitaxial regions will not become porous and will become isolated islands suitable for the fabrication of semiconductor devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.