Eldon J. Zorinsky
11Patents
10h-index
6Co-inventors
57Inventor score
Filing activity: Oct 31, 1984 → Jun 30, 1993
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US4810667A | Dielectric isolation using isolated silicon by limited anodization of an N+ epitaxially defined sublayer in the presence of a diffusion under film layer | Electricity | 30 | Expired |
| US4628591A | Method for obtaining full oxide isolation of epitaxial islands in silicon utilizing selective oxidation of porous silicon | Emerging Cross-Sectional Technologies | 30 | Expired |
| US4985744A | Method for forming a recessed contact bipolar transistor and field effect transistor | Electricity | 24 | Expired |
| US5075241A | Method of forming a recessed contact bipolar transistor and field effect device | Emerging Cross-Sectional Technologies | 22 | Expired |
| US4891103A | Anadization system with remote voltage sensing and active feedback control capabilities | Chemistry; Metallurgy | 21 | Expired |
| US4897703A | Recessed contact bipolar transistor and method | Emerging Cross-Sectional Technologies | 19 | Expired |
| US4982263A | Anodizable strain layer for SOI semiconductor structures | Emerging Cross-Sectional Technologies | 16 | Expired |
| US4849370A | Anodizable strain layer for SOI semiconductor structures | Electricity | 16 | Expired |
| US5316957A | Method of forming a recessed contact bipolar transistor | Emerging Cross-Sectional Technologies | 14 | Expired |
| US4897698A | Horizontal structure thin film transistor | Electricity | 11 | Expired |
| US5019525A | Method for forming a horizontal self-aligned transistor | Emerging Cross-Sectional Technologies | 8 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.