Method of growing InGaAsP on InP substrate with corrugation
US4629532A · kind A · utility
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9Claims
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Key dates
| Filing date | Jul 25, 1984 |
| Grant date | Dec 16, 1986 |
| Priority date | — |
| Expiry date | Jul 25, 2004 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S117/913
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of growing an InGaAsP layer on a corrugated InP substrate as a part of a procedure for producing a DFB semiconductor laser includes the step of heating the substrate up to temperatures approaching 700.degree. C. while holding the substrate in an atmosphere which contains arsine and phosphine. The substrate is subsequently moved to InGaAsP and InP growth chambers for growth of these respective layers. The method of the invention is advantageous in that the corrugated structure of the substrate is maintained intact throughout the procedure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.