Multilayer depth profile method
US4629536A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 12, 1985 |
| Grant date | Dec 16, 1986 |
| Priority date | — |
| Expiry date | Mar 12, 2005 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S505/843
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Methods are provided for analyzing multilayer structures. The multilayer structure is electrolytically anodized at constant current through a plurality of layers of the structure over a predetermined surface area. During the anodization, the change of the anodization voltage or a time derivative thereof as a function of time is monitored as the anodization through the layers occurs to obtain data. The data may be analyzed in several ways to determine whether degradation of the multilayer structure has occurred, to determine the number of layers present in the multilayer structure and to determine the layer thickness of the multilayer structure. The disclosed methods are accurate, inexpensive and rapid.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.