Mercury cadmium telluride infrared focal plane devices having step insulator and process for making same

US4630090A · kind A · utility

Assignee

• TEXAS INSTRUMENTS INCORPORATED · US

Inventors

• Arturo Simmons · Garland, US
• Michael A. Kinch · Dallas, US

Key dates

• Filing date: Sep 25, 1984
• Grant date: Dec 16, 1986
• Expiry date: Sep 25, 2004

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/86

Abstract

The disclosure relates to a stepped insulator process for HgCdTe infared focal plane devices, the insulator being a combination of two insulator materials, ZnS and SiO, which differ in dielectric constant and chemical reactivity. The structure is patterned on HgCdTe which has an accumulated surface region. The resulting configuration significantly reduces pin hole short circuits introduced during via etching and improves the operating range (channel stopping action) for a given step height over that of ZnS alone.