Buried heterojunction laser
US4630279A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 1, 1983 |
| Grant date | Dec 16, 1986 |
| Priority date | — |
| Expiry date | Feb 1, 2003 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/2234
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Disclosed herein is a semiconductor laser device including at least an optical confinement region having at least first, second and third semiconductor layers disposed on a semiconductor substrate, wherein the first and third semiconductor layers have refractive indices greater than the refractive index of the second semiconductor layer but have forebidden band gap smaller than that of the second semiconductor layer and the conductivity types of the first and third semiconductor layers are opposite to each other; the second semiconductor layer has a smooth change of its thickness in two directions parallel to a junction surface of the optical confinement region; and a difference exists in the refractive indices of the first and third semiconductor layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.