Photochemical vapor deposition process for depositing oxide layers
US4631199A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 22, 1985 |
| Grant date | Dec 23, 1986 |
| Priority date | — |
| Expiry date | Jul 22, 2005 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02271
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An improved process for depositing an oxide layer on a substrate by exposing the substrate to a selected vapor phase reactant and an oxygen-containing precursor comprising nitrous oxide mixed with molecular oxygen in a predetermined ratio, in the presence of radiation of a selected wavelength. The radiation causes the direct dissociation of the oxygen-containing precursor to form neutral oxygen atoms that react with the vapor phase reactant and form the oxide, which deposits as a layer on the substrate. The rate of reaction to form and deposit the oxide layer is enhanced by the mixing of molecular oxygen with nitrous oxide in the precursor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.