Semiconductor overvoltage suppressor with accurately determined striking potential

US4631561A · kind A · utility

Assignee

• SGS-Ates Componenti Elettronici S.p.A. · IT

Inventors

• Mario Foroni · Valeggio sul Mincio, IT
• Franco Bertotti · Milano, IT

Key dates

• Filing date: Jul 23, 1984
• Grant date: Dec 23, 1986
• Expiry date: Jul 23, 2004

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D8/80

Abstract

A semiconductor suppressor device consists of a structure including a P-type substrate, an N-type epitaxial layer, a first P-type diffusion region in the epitaxial layer, and a second N-type diffusion region in the first region. A first metallic layer which is in contact with the substrate and a second metallic region which is in contact with the first and the second regions form the terminals of the device. The epitaxial layer has at least one zone along the junction with the first region which has a higher concentration than the rest of the layer so that the conduction through a reverse-biased junction occurs in this zone. This enables the establishment of a highly accurate striking potential for the suppressor device.