Ion implanter
US4633138A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 16, 1985 |
| Grant date | Dec 30, 1986 |
| Priority date | — |
| Expiry date | Aug 16, 2005 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG21K5/10
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
In order to implant ions uniformly in a plurality of wafers, carriers, on which a plurality of wafers are mounted, are moved along a straight line one after another. An ion implanter comprises a beam sweep width controller for controlling the beam sweep width in such a manner that the area scanned with the ion beam by sweeping it coincides approximately with the shape of the wafers in which ions are to be implanted and a carrier speed controller for controlling the carrier speed, depending on the beam sweep width so that the dose of ions implanted in the wafers is uniform. The beam sweep width controller includes a detector for detecting the width of a wafer in which ions are being implanted in the one direction and a controller for varying the beam sweep width, depending on the width of the wafer thus detected. The carrier speed controller varies the carrier speed inversely proportionally to the width of the wafer thus detected.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.