Method of treating silicon nitride film formed by plasma deposition
US4636400A · kind A · utility
9Cited by
5References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 9, 1985 |
| Grant date | Jan 13, 1987 |
| Priority date | — |
| Expiry date | Sep 9, 2005 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/345
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of treating a silicon nitride film formed by plasma deposition and deposited on a substrate, which comprises: (1) irradiating the silicon nitride film, and (2) heating the silicon nitride film during the irradiating.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.