Tadashi Nishioka
36Patents
15h-index
22Co-inventors
81Inventor score
Filing activity: Aug 21, 1980 → Oct 29, 2019
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5595941A | Method of forming fine patterns | Emerging Cross-Sectional Technologies | 50 | Expired |
| US5652428A | Method of using scanning probe microscope allowing cleaning of probe tip in ambient atmosphere | Emerging Cross-Sectional Technologies | 49 | Expired |
| US5107114A | Fine scanning mechanism for atomic force microscope | Emerging Cross-Sectional Technologies | 35 | Expired |
| US5465145A | Semiconductor wafer inspection apparatus | Electricity | 34 | Expired |
| US4947042A | Tunnel unit and scanning head for scanning tunneling microscope | Emerging Cross-Sectional Technologies | 34 | Expired |
| US4431967A | Method of mounting a semiconductor element for analyzing failures thereon | Electricity | 29 | Expired |
| US4880975A | Fine adjustment mechanism for a scanning tunneling microscope | Emerging Cross-Sectional Technologies | 27 | Expired |
| US5720814A | Photoresist coating apparatus | Physics | 25 | Expired |
| US5477732A | Adhesion measuring method | Electricity | 24 | Expired |
| US5469733A | Cantilever for atomic force microscope and method of manufacturing the cantilever | Emerging Cross-Sectional Technologies | 21 | Expired |
| US4945235A | Fine adjustment mechanism for a scanning tunneling microscope | Emerging Cross-Sectional Technologies | 18 | Expired |
| US5702849A | Mask for transferring a pattern for use in a semiconductor device and method of manufacturing the same | Emerging Cross-Sectional Technologies | 17 | Expired |
| US4837445A | Coarse adjusting device of scanning tunneling microscope | Emerging Cross-Sectional Technologies | 15 | Expired |
| US5710066A | Method of forming fine patterns | Emerging Cross-Sectional Technologies | 15 | Expired |
| US4853341A | Process for forming electrodes for semiconductor devices using focused ion beams | Emerging Cross-Sectional Technologies | 15 | Expired |
| US5267066A | Liquid crystal display device, method of correcting defective pixels, and defective-pixel correcting apparatus used therein | Physics | 14 | Expired |
| US5688723A | Method of forming fine patterns | Emerging Cross-Sectional Technologies | 12 | Expired |
| US5193385A | Cantilever for use in atomic force microscope and manufacturing method therefor | Emerging Cross-Sectional Technologies | 12 | Expired |
| US5622787A | Mask for transferring a pattern for use in a semiconductor device and method of manufacturing the same | Emerging Cross-Sectional Technologies | 12 | Expired |
| US4691078A | Aluminum circuit to be disconnected and method of cutting the same | Emerging Cross-Sectional Technologies | 11 | Expired |
| US4962059A | Process for forming electrodes for semiconductor devices using focused ion beam deposition | Emerging Cross-Sectional Technologies | 10 | Expired |
| US4952421A | Method for repairing a pattern | Electricity | 9 | Expired |
| US4636400A | Method of treating silicon nitride film formed by plasma deposition | Chemistry; Metallurgy | 9 | Expired |
| US4990489A | Read only memory device including a superconductive electrode | Emerging Cross-Sectional Technologies | 8 | Expired |
| US5656809A | Atomic force microscope and measuring head thereof with linearly polarized reflected light | Emerging Cross-Sectional Technologies | 7 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.